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1. Identity statement
Reference TypeJournal Article
Sitemtc-m21b.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34P/3NNKRRE
Repositorysid.inpe.br/mtc-m21b/2017/04.19.15.11   (restricted access)
Last Update2017:05.15.21.10.29 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m21b/2017/04.19.15.11.50
Metadata Last Update2018:06.04.02.27.24 (UTC) administrator
DOI10.1107/S1600576717000760
ISSN0021-8898
Citation KeyMorelhãoFornRappAbra:2017:NaChBi
TitleNanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis
Year2017
Access Date2024, May 18
Type of Workjournal article
Secondary TypePRE PI
Number of Files1
Size2134 KiB
2. Context
Author1 Morelhão, S. L.
2 Fornari, Celso Israel
3 Rappl, Paulo Henrique de Oliveira
4 Abramof, Eduardo
Resume Identifier1
2
3 8JMKD3MGP5W/3C9JJ37
4 8JMKD3MGP5W/3C9JGUH
Group1
2 CMS-ETES-SESPG-INPE-MCTIC-GOV-BR
3 LABAS-COCTE-INPE-MCTIC-GOV-BR
4 LABAS-COCTE-INPE-MCTIC-GOV-BR
Affiliation1 Universidade de São Paulo (USP)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1
2 celso.fornari@inpe.br
3 paulo.rappl@inpe.br
4 eduardo.abramof@inpe.br
JournalJournal of Applied Crystallography
Volume50
Pages399-410
Secondary MarkA1_MATERIAIS A1_GEOCIÊNCIAS A1_ENGENHARIAS_III A1_BIOTECNOLOGIA A2_QUÍMICA A2_MATEMÁTICA_/_PROBABILIDADE_E_ESTATÍSTICA A2_ENGENHARIAS_II A2_ASTRONOMIA_/_FÍSICA
History (UTC)2017-04-19 15:11:50 :: simone -> administrator ::
2017-04-19 15:11:51 :: administrator -> simone :: 2017
2017-04-19 15:12:02 :: simone -> administrator :: 2017
2017-04-21 11:17:33 :: administrator -> simone :: 2017
2017-06-02 14:09:04 :: simone -> administrator :: 2017
2018-06-04 02:27:24 :: administrator -> simone :: 2017
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
Keywordsbismuth telluride
model structure simulation
nanostructured domains
three-dimensional reciprocal-space maps
X ray diffraction
AbstractThe surface properties of topological insulators are strongly correlated with their structural properties, requiring high-resolution techniques capable of probing both surface and bulk structures at once. In this work, the high flux of a synchrotron source, a set of recursive equations for fast X-ray dynamical diffraction simulation and a genetic algorithm for data fitting are combined to reveal the detailed structure of bismuth telluride epitaxial films with thicknesses ranging from 8 to 168 nm. This includes stacking sequences, thickness and composition of layers in model structures, interface coherence, surface termination, and morphology. The results are in agreement with the surface morphology determined by atomic force microscopy. Moreover, by using X-ray data from a zero-noise area detector to construct three-dimensional reciprocal-space maps, insights into the nanostructure of the domains and stacking faults in Bi2Te3 films are given.
AreaFISMAT
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4. Conditions of access and use
Languageen
User Groupsimone
Reader Groupadministrator
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Visibilityshown
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Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Linking8JMKD3MGP3W34P/3NAEMRH
Mirror Repositorysid.inpe.br/mtc-m21b/2013/09.26.14.25.22
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3F358GL
Citing Item Listsid.inpe.br/bibdigital/2013/09.24.19.30 3
sid.inpe.br/mtc-m21/2012/07.13.14.57.50 2
sid.inpe.br/mtc-m21/2012/07.13.14.44.57 2
DisseminationWEBSCI
Host Collectionsid.inpe.br/mtc-m21b/2013/09.26.14.25.20
6. Notes
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